|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Characterization of Minerals, Metals and Materials
||Quasi-plastic Zone Characterization of Regular and Si-doped Boron Carbide
||Sisi Xiang, Kelvin Yu Xuan Xie
|On-Site Speaker (Planned)
||Kelvin Yu Xuan Xie
Boron carbide (B4C) is a hard and lightweight material, which has many engineering applications. However, B4C loses its strength and toughness when subjected to high shear stresses. To improve its mechanical properties, the pervious computation work has suggested micro-alloying B4C with Si. Very limited understanding of the failure mechanism of boron carbide, both Si-free and Si-doped, under high shear stress conditions is due to the lack of direct experimental observation at the relevant length scale for damage zone. Here we investigate the local deformation microstructure of regular and Si-doped boron carbide under indents, using a novel precession electron diffraction technique and high-resolution transmission electron microscopy. We observed that Si-doped boron carbide displays dispensed micro-cracks, while Si-free boron carbide exhibits major local cracks and low interfaces.