About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
|
Advances in Surface Engineering VI
|
Presentation Title |
Structural and Electrical Properties of Aluminum oxide Thin Films by Atomic Layer Deposition for Passivation and Etch Stop Layer |
Author(s) |
Sangwoo Lee, In Gyu Choi, Byeong Seong Choi, Jaeyoung Yang, Taekjib Choi |
On-Site Speaker (Planned) |
Sangwoo Lee |
Abstract Scope |
The Damascene process is a common technique used in the production of integrated circuits to create embedded metal lines. This process involves patterning and etching the interlayer dielectrics (ILD) to form vias and trenches, which are then filled with metal. To protect the underlying layers during this patterning process, etch stop layers (ESL) are often deposited over ILD layers and metal lines. Aluminum oxide is frequently used as the material for these layers in the back end of line of ICs due to its desirable properties, including high chemical resistance and etch selectivity, low dielectric constant (k<9), and high density (~3.8 g/cm3). Aluminum oxide thin films were deposited by thermal atomic layer deposition. We investigate the dielectric properties and etch selectivity of aluminum oxide thin films with a various deposition condition and will discuss the effect of carbon concentration on its dielectric constant and leakage current. |
Proceedings Inclusion? |
Planned: |
Keywords |
Aluminum, Thin Films and Interfaces, |