|About this Abstract
||Materials Science & Technology 2020
||Integration between Modeling and Experiments for Crystalline Metals: From Atomistic to Macroscopic Scales II
||ECCI Image Simulations for Arbitrary Defect Displacement Fields
||Marcus Ochsendorf, Joseph Tessmer, Marc De Graef
|On-Site Speaker (Planned)
Electron Channeling Contrast Imaging (ECCI) is an established method of imaging near-surface defects using Scanning Electron Microscopy (SEM). Traditionally, the types of ECCI defect images that can be readily simulated have been limited to those that have displacement fields that can be expressed analytically, which has somewhat limited the usefulness of the simulation approach. Molecular Dynamics (MD) and Discrete Dislocation Dynamics (DDD) simulations can be used to determine displacement fields of a variety of defect configurations. We will show that direct simulation of ECCI images based on MD or DDD displacement fields provides an opportunity for a quantitative one-to-one comparison between experiment and simulation, providing further insight on the mechanisms of defect behavior in a variety of material systems. ECCI simulation results will be provided for several defect types, including a dissociated dislocation in a medium entropy alloy, and an expanding dislocation loop wrapping around obstacles.