Faceted grain boundaries, or interfaces which increase their surface area to lower their net energy, have unusual structures that influence migration in unexpected ways. Some of these interesting behaviors, such as antithermal mobility, are correlated with grain boundary dislocation activity within facet planes and junctions. In this talk, we explore how Shockley partial dislocation emission affects the migration of faceted Σ11 <110> tilt bicrystal boundaries in various pure and doped FCC metals using molecular dynamics and an artificial driving force. We find that Shockley partial dislocations at junctions can lead to boundary migration velocities that differ depending on the migration direction. This directionally-anisotropic mobility can be influenced by changes in material, temperature, and dopant concentration, which each alter boundary dislocation activity during migration. Finally, the potential impact of this type of anisotropy on the coarsening of a polycrystalline grain boundary network is also investigated.