|About this Abstract
|Materials Science & Technology 2020
|Integration between Modeling and Experiments for Crystalline Metals: From Atomistic to Macroscopic Scales II
|Integrating Materials Models and Dynamical Electron Diffraction Simulations for Dislocation Analysis using STEM-Defect Contrast Imaging
|Joseph Tessmer, Mulaine Shih, Yejun Gu, Jafaar El-Awady, Maryam Ghazisaeidi, Marc De Graef
|On-Site Speaker (Planned)
The number and type of dislocations present in crystalline materials have a strong impact on material properties. Conventional Transmission Electron Microscopy (CTEM) has been used for decades to characterize dislocations in such materials. However, novel techniques such as Scanning Transmission Electron Microscopy Dislocation Contrast Imaging (STEM-DCI) can be used to characterize dislocations in a similar manner to CTEM, while suppressing undesirable image features, such as bend contours. Unlike dislocation imaging the CTEM modality, there is not yet a large body of work to which STEM-DCI images can be compared. This work aims to couple dynamical electron diffraction simulations with the output of multiple mechanical models, including Discrete Dislocation Dynamics and Molecular Dynamics. Such simulated images can be used to identify contrast features in experimentally obtained images, helping to verify the underlying features of the microstructure which produced those contrast features.