| About this Abstract |
| Meeting |
Materials Science & Technology 2020
|
| Symposium
|
Advances in Synthesis and Integration Methods for Enhanced Properties, and Applications in Emerging Nanomaterials
|
| Presentation Title |
Impact of Processing Parameters on Metal Oxide Resistive Random Access Memory (RRAM) Performance and Implications for non-von Neumann Computing Approaches |
| Author(s) |
Nathaniel Cady |
| On-Site Speaker (Planned) |
Nathaniel Cady |
| Abstract Scope |
Resistive Random Access Memory (ReRAM) devices are a novel form of non-volatile memory expected to replace a variety of current memory technologies and enable the design of new, non-von Neumann circuit architectures. A variety of challenges persist, however, for integrating memristors with CMOS, as well as for tuning device electrical performance. We have found that tuning the processing parameters used in RRAM device integration greatly affects device performance. This includes both deposition conditions (typically atomic layer deposition) and reactive ion etching conditions. We are particularly focused on fabrication strategies that reduce stochastic switching behavior during both binary and analog RRAM device switching. This is a key metric for neuromorphic applications, as variability in device conductance state directly influences the ultimate number of levels (weights) that can be implemented per synapse. |