| Abstract Scope |
With the end of Moore’s law, the need to reinvent the transistor is yet again upon us. Here, I will describe our efforts to develop a single device that can dynamically reconfigure into either an n- or a p-channel MOSFET, which we implement with a tunable Schottky junction. We form Schottky junctions between graphene and semiconductors, including 2D transition metal dichalcogenide (TMD) semiconductors, the material of choice for developing 3D monolithic integration. These junctions can be tuned perfectly by a gate, confirming the much sought-after Schottky-Mott limit. The tunability allows reconfigurable devices that can implement more efficient logic devices, including XNOR-Net for machine learning applications. To characterize these junctions, we use the Landauer quantum transport formalism to analyze the physics of these devices. I will conclude by briefly discussing our status in developing the 2nd transistor layer above the 1st CMOS layer using TMD materials. |