|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications VIII
||Thermoelectric Properties of p-type Mg Doped CuMO2 Delafossite Thin Films and Modules
||Yohann Thimont, Inthuga Sinnarasa, Antoine Barnabé, Philippe Tailhades, Lionel Presmanes
|On-Site Speaker (Planned)
The interest of thin films for thermoelectric (TE) applications growths for TE devices miniaturization. The TE applications based on the oxide materials show also some interests as: environment friendly, high stability and some combined properties (as optical).
To satisfy these conditions, we have chosen to deposit p type 3% Mg doped CuMO2 (M was Cr or Fe) compounds on fused silica thanks to RF magnetron sputtering and thin films were annealed at various temperatures under vacuum. The physical properties as the Seebeck coefficients, the electrical and thermal conductivities were measured. The optimized annealed films showed a maximum of power factor of 85µW.m-1.K-2 for the 300nm Mg doped CuFeO2 thin film. A transparent unileg TE module has been elaborated with 100nm thick Mg:CuCrO2 tracks and allowed to produce a power of 11 nW when a Thot of 225°C was applied. This type of TE device could be advantageous for microelectronic applications.
||Planned: Supplemental Proceedings volume