|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications VIII
||Transmission Electron Microscopy Study of Hole-selective Contacts Employed in Silicon Solar Cells
||Haider Ali, Geoffrey Gregory, Kristopher O Davis
|On-Site Speaker (Planned)
Molybdenum oxide (MoOx) and tungsten oxide (WOx) are often employed as hole-selective contacts in crystalline silicon (c-Si) solar cells. Typically, ultra-thin (<10 nm) MoOx/ WOx is sandwiched between a-Si:H(i)/SiO2 (< 5 nm) passivation layer and either a transparent conducting oxide (e.g. indium tin oxide) or a metal contact (e.g. Al, Ni). The resulting contact structures not only provide efficient hole-selectivity but also results in very low surface recombination and minimal optical parasitic absorption. However, such contacts are sensitive to low temperature (≈ 200°C) anneal resulting in loss of cell efficiencies. To understand the origin of these losses, nanoscale characterization of these contact structures was performed with the help of transmission electron microscopy (TEM). It emerged that high-resolution TEM (HRTEM) imaging in combination with analytical TEM techniques (i.e. EDS, EELS) can be employed to detect the formation of interlayers as well as any elemental diffusion occurring within such contact structures.
||Planned: Supplemental Proceedings volume