|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications VIII
||D-4: Assessment of Co-P Diffusion Barrier for Bismuth Telluride-based Thermoelectric Materials
||Zhen-Wei Sun, Chun-Hsien Wang, Albert T. Wu
|On-Site Speaker (Planned)
Bismuth telluride (Bi2Te3) is commonly used as thermoelectric materials owing to high figure of merit (zT) at low temperature range. The module requires the joining between Bi2Te3 and commercial Sn-based solder. The materials would react severely at the interface when assembling the module. Fast growing SnTe and Bi precipitates would deteriorate the thermoelectric performance and reliability of the module. To inhibit the formation of SnTe and Bi-rich phase, electroless cobalt-phosphorus (Co-P) layer is added to serve as an effective diffusion barrier on Bi2Te3-based substrate. The interfacial stability and the mechanical strength of the joints were improved. The results show that Co-P diffusion barrier can be used to enhance the reliability of the thermoelectric module.
||Planned: Supplemental Proceedings volume