|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications VIII
||Approaches to Manipulate p-n Conduction Transition and High Thermoelectric Performance in Ga-incorporated Bi2Te3
||Hsin-Jay Wu, Chun-han Lin, Wan-ting Yen
|On-Site Speaker (Planned)
Years of efforts have driven the research trend seeking for high-zT, cost-effective and thermally stable thermoelectric (TE) materials, attempting to assemble a high-performance TE device that composed of p- and n-type legs with high zTs. In this study, a thermodynamic approach is established under the support of phase diagram, which allows one to control the p-n conduction transition in the Bi2Te3-based materials via the changing Ga solubility. With the incorporation of single-dopant Gallium (Ga), the p-type Ga-substituted Bi2-bGabTe3 achieves the highest zT peak value of 1.2 while the Ga2Te5-alloyed (Bi2Te3)1-a(Ga2Te5)a reveals an outstanding zT peak value over 1.5 at 300 K, where both alloys present different phase features.
||Planned: Supplemental Proceedings volume