|About this Abstract
||MS&T22: Materials Science & Technology
||Controlled Synthesis, Processing, and Applications of Structural and Functional Nanomaterials
||Quantifying the Electrode Clamping Effect and Its Role on Phase Stability in Ferroelectric Hafnium Zirconium Oxide
||Jon F. Ihlefeld, Shelby S. Fields, Truong Cai, Samantha T. Jaszewski, Kyle P. Kelley, Helge Heinrich, M. David Henry, Brian Sheldon
|On-Site Speaker (Planned)
||Jon F. Ihlefeld
Ferroelectric hafnia-based films hold unprecedented promise for advancing the use of ferroelectrics in microelectronics owing to their lack of size effects and compatibility with mainstream semiconductors. Ferroelectric response is attributed to a metastable orthorhombic phase, whose origin is widely debated. The impact of biaxial tensile stress on phase stability will be discussed. It will be shown how the presence of a top electrode during the crystallization anneal imparts a different stress state to the film/substrate stack during heating than that without the top electrode. The differences were quantified at each processing stage and the stress within the hafnia layer was isolated via XRD sin2(Ψ) analyses. It will be shown that the activation barrier for transformation from the metastable ferroelectric phase to the equilibrium monoclinic phase is 12 meV/f.u., on the basis of elastic energy analysis. The results provide a path toward preparing phase-pure ferroelectric hafnia films needed for reliable performance.