|About this Abstract
||MS&T22: Materials Science & Technology
||Controlled Synthesis, Processing, and Applications of Structural and Functional Nanomaterials
||Ferroelectricity in Hf0.5Zr0.5O2 Films – Processing Options to Achieve Better Ferroelectric Performance
||Jacob L. Jones, Alex H. Hsain, Youghwan Lee, Gregory Parsons
|On-Site Speaker (Planned)
||Jacob L. Jones
HfO2 has revealed unanticipated dielectric and ferroelectric behavior, creating exciting new opportunities for thin film devices. Enhancing the functional properties of these materials on a variety of substrates, e.g., non-planar and porous, as well as at low processing temperatures opens opportunities for high-efficiency capacitors, integrated devices on flexible and wearable electronics, and novel applications in energy conversion. The vision of our work in HfO2-based ferroelectric films is to enable new functional applications of ferroelectric thin films (10-30 nm) based on doped HfO2 and HfxZr1-xO2 by advancing the underlying processing science, mostly associated with Atomic Layer Deposition (ALD). This presentation will review the dependence of composition (x) in HfxZr1-xO2 (DOI: 10.1063/5.0002835), a new process for depositing TiN electrodes in ALD, a processing process we called Sequential, No-Atmosphere Processing (SNAP) (DOI: 10.1063/5.0029532), and our recent results on the control of texture and it’s effect on ferroelectric properties.