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Meeting 2023 TMS Annual Meeting & Exhibition
Symposium Frontiers of Materials Award Symposium: Ultra-Wide Bandgap Materials and Heterostructures for Next Generation Power, RF and Quantum Applications
Presentation Title Epitaxial Growth of c-BN on Diamond and Strategies for Electronic Applications
Author(s) Avani Patel, Saurabh Vishwakarma, Ali Ebadi Yekta, Jesse Brown, David J. Smith, Robert J. Nemanich
On-Site Speaker (Planned) Robert J. Nemanich
Abstract Scope Cubic boron nitride (c-BN) is an ultra-wide bandgap semiconductor with properties appropriate for high power, high frequency electronics for extreme environments (high temperature, high radiation, and corrosive environments). The 6.4 eV bandgap of c-BN projects a breakdown field > 12 MV/cm. Moreover, n-type doping with S and Si (~0.3eV) and p-type doping with Be and Mg (~0.24 eV) have been demonstrated. The measured electron mobility of 825 cm2/V-s agree reasonably with theoretical values of 956 to 1680 cm2/V-s. In this talk, I will discuss our recent research efforts on epitaxial c-BN on diamond structures using ECR plasma enhanced CVD. The 150 nm thick c-BN films grown on single crystal diamond substrates are stable against delamination. The potential of epitaxial c-BN for different device configurations will be also discussed. Acknowledgement: Financial support by DOE through the ULTRA EFRC DE-SC0021230 (interface characterization) and the NSF DMR-2003567 (c-BN growth chemistry).
Proceedings Inclusion? Planned: None Selected


AlN-based Microelectronics for Extreme High Temperature Environments
Epitaxial Growth of c-BN on Diamond and Strategies for Electronic Applications
Gallium Oxide Semiconductors: Recent Progress and Future Prospective
Nanoscale Engineering of III-Nitride Heterostructures for High Efficiency UV Optoelectronics and Quantum Photonics
Quantum Technologies with Diamond
Ultrawide Bandgap Materials: Properties, Synthesis and Devices

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