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Meeting 2023 TMS Annual Meeting & Exhibition
Symposium Frontiers of Materials Award Symposium: Ultra-Wide Bandgap Materials and Heterostructures for Next Generation Power, RF and Quantum Applications
Presentation Title Ultrawide Bandgap Materials: Properties, Synthesis and Devices
Author(s) Yuji Zhao
On-Site Speaker (Planned) Yuji Zhao
Abstract Scope Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, BN and AlN, are a new class of semiconductors that possess a wide range of attractive properties, including very large bandgap, high critical electric field, high carrier mobility and chemical inertness. Due to these outstanding characteristics, UWBG materials are promising candidates to enable high-performance devices for RF and power electronics, ultraviolet photonics, quantum sensing and quantum computing applications. Despite their great potential, the research of UWBG semiconductors is still at a nascent stage and represents a challenging interdisciplinary research area of physics, materials science and devices engineering. In this talk, I will give an overview on the material properties, synthesis methods and device applications of UWBG semiconductors including diamond, Ga2O3, h-BN and AlN. I will also give a brief introduction of the invited speakers and their leading work in the field.
Proceedings Inclusion? Planned: None Selected


AlN-based Microelectronics for Extreme High Temperature Environments
Epitaxial Growth of c-BN on Diamond and Strategies for Electronic Applications
Gallium Oxide Semiconductors: Recent Progress and Future Prospective
Nanoscale Engineering of III-Nitride Heterostructures for High Efficiency UV Optoelectronics and Quantum Photonics
Quantum Technologies with Diamond
Ultrawide Bandgap Materials: Properties, Synthesis and Devices

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