|About this Abstract
|2022 TMS Annual Meeting & Exhibition
|Late News Poster Session
|H-34: Low-cost Solution Processed Facile h-MoO3 Synthesis for Heterojunction Diode
|Surendra Kumar, Kamal Rudra, Abhishek Kumar Singh, Sanjai Singh , Pramod Kumar
|On-Site Speaker (Planned)
In recent times, heterojunctions of 1-D nanorods of transition metal oxides with n-type silicon have shown some peculiar electrical properties. Owing to such peculiarities, we investigate the electrical behavior of n-Si heterojunction with chemically synthesized h-MoO3 nanorods. To fabricate heterojunction, first, the nanorods were ground and suspended in a solution of ethanol and DI water followed by sonication in a water bath for 2 hours and centrifugation at 4000 rpm. The supernatants were collected. FESEM and XRD confirm the formation of h-MoO3 nanorods. Optical properties were characterized using UV-Visible spectroscopy. The collected supernatants were deposited over n-type silicon by spin coating at 1500 rpm for 15 seconds followed by the aluminium contact deposition. Room temperature current-voltage (IV) measurements of the heterojunction show a rectifying behavior with a rectification ratio of ̴12. This facile fabrication process paves the way for various low-cost applications especially in the field of sensing and photonics.