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Meeting Materials Science & Technology 2020
Symposium Grain Boundaries, Interfaces, and Surfaces in Functional Materials: Fundamental Structure-Property-Performance Relationships
Presentation Title Thermal Property of Diamond Thin Film on Si (100) Substrate
Author(s) Chunyan Zhang, Joseph P. Feser, Chaoying Ni
On-Site Speaker (Planned) Chunyan Zhang
Abstract Scope The thermal conductivity (κ) of a thin film is important in electronic devices because the capability to transport heat is often a factor to limit the device performance. In this work, we investigated the thermal property of polycrystalline diamond film deposited on single crystal Si (100) substrate. The interfacial microstructure was characterized by TEM and the interfacial thermal resistance (G) and κ were measured by time-domain thermoreflectance method. The diamond thin film was found to have a κ value of 240.93 W/(mK) which is greatly smaller than that of bulk diamond (up to 2200 W/(mK)) and a G value of 0.018 GW/(m2K). The amorphous transition layer captured by TEM, large Debye temperature and lattice constant mismatch between diamond and Si cause an increase in the interfacial thermal resistance. The low κ is due to grain boundary scattering and a thinner film thickness shorter than the MFP of phonon in diamond.
Proceedings Inclusion? Undecided


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Thermal Property of Diamond Thin Film on Si (100) Substrate
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