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Meeting Materials Science & Technology 2020
Symposium Grain Boundaries, Interfaces, and Surfaces in Functional Materials: Fundamental Structure-Property-Performance Relationships
Presentation Title Thermal Property of Diamond Thin Film on Si (100) Substrate
Author(s) Chunyan Zhang, Joseph P. Feser, Chaoying Ni
On-Site Speaker (Planned) Chunyan Zhang
Abstract Scope The thermal conductivity (κ) of a thin film is important in electronic devices because the capability to transport heat is often a factor to limit the device performance. In this work, we investigated the thermal property of polycrystalline diamond film deposited on single crystal Si (100) substrate. The interfacial microstructure was characterized by TEM and the interfacial thermal resistance (G) and κ were measured by time-domain thermoreflectance method. The diamond thin film was found to have a κ value of 240.93 W/(mK) which is greatly smaller than that of bulk diamond (up to 2200 W/(mK)) and a G value of 0.018 GW/(m2K). The amorphous transition layer captured by TEM, large Debye temperature and lattice constant mismatch between diamond and Si cause an increase in the interfacial thermal resistance. The low κ is due to grain boundary scattering and a thinner film thickness shorter than the MFP of phonon in diamond.
Proceedings Inclusion? Undecided

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

A Survey of Constrained Grain Boundary Migration Mechanisms
Advanced TEM of Interfaces and Defects in Functional Ceramics
Anisotropy at Interfaces in Rare-earth Pyrosilicates for High-temperature Coatings
Effect of Electrode Composition and Potential on Moisture Incorporation and Degradation in Dielectrics and Piezoelectrics
Electromigration-induced Defects' Evolution in Polycrystalline Interconnects: Insights from Phase-field Simulations
Equilibrium and Kinetic Shapes of Grains in Polycrystals
Grain Boundary Engineering ZnAl2O4 via Rare Earth (RE) Doping with Varying Ionic Radii
Implications of Ferroelectricity in Perovskite Solar Cells
Phase Stability of Sr1-xBaxMnO3 (0 ≤ x ≤ 0.5) Films Using Combinatorial Substrate Epitaxy
Relating Grain Size Distributions and Grain Boundary Excess Coverages to Complexion Transitions in Eu-doped MgAl2O4
The Impact of Metastable Grain Boundary States on Mobility in FCC Metal
Thermal Property of Diamond Thin Film on Si (100) Substrate
Vacancy-enhanced Grain Boundary Migration

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