Abstract Scope |
Bismuth telluride (Bi2Te3) alloys have been the well-established thermoelectric (TE) cooler since the 1960s. To date, the Bi2Te3-based alloys still attract numerous attention as they are the best TE materials near the room temperature region. This study aims to boost the TE performance of n-type Bi2Te3 crystals by light impurity doping and entropy engineering. Dilute dopants of Ag, Cu, S, Se are incorporated into Bi2Te3 crystals, aiming to boost the carrier mobility while leaving the band structure of Bi2Te3 unaffected. When it comes to the thermal conductivity reduction, entropy engineering is exploited by doping with Ag, Cu, Sand Se. The synergistic approaches of light impurity doping and entropy engineering enable the tradeoff between high power factor and low thermal conductivity, advancing the TE performance for n-type Bi2Te3. |