| About this Abstract |
| Meeting |
MS&T21: Materials Science & Technology
|
| Symposium
|
Functional Defects in Electroceramic Materials
|
| Presentation Title |
Dislocations as “Self-dopants” in Functional Oxides, Exemplified for TiO2 |
| Author(s) |
Qaisar Khushi Muhammad, Lukas Porz, Atsutomo Nakamura, Katsuyuki Matsunaga, Marcus Rohnke, Jürgen Janek, Till Frömling, Jürgen Rödel |
| On-Site Speaker (Planned) |
Qaisar Khushi Muhammad |
| Abstract Scope |
Dislocations as heavily charged line defects have so far been underappreciated as a means to tune functionality but are finding increasing attention today. To modify electrical properties of rutile (TiO2), (prevalent due to its applications; for example, gas sensors) defect engineering via chemical doping has an important role. However, often the solubility limits of the dopant restricts this method for tailoring material properties significantly while it increases material complexity.Here, we demonstrate the possibility to induce equivalent conductivity enhancements akin to conventional chemical doping by mechanically introduced dislocations. By controlling the mesoscopic structure of dislocations, we are able to both enhance and reduce conductivity. These changes are documented by temperature and oxygen partial pressure dependent conductivity measurements. In this way, the prospect of dislocations as “self-dopants” is presented, where the additional design parameter of the dislocation arrangement renders them potentially superior to conventional chemical doping strategies. |