| About this Abstract |
| Meeting |
MS&T21: Materials Science & Technology
|
| Symposium
|
Emergent Materials under Extremes and Decisive In Situ Characterizations
|
| Presentation Title |
Photoindentation: A New Route to Understanding Dislocation Behavior in Light |
| Author(s) |
Atsutomo Nakamura, Xufei Fang, Ayaka Matsubara, Eita Tochigi, Yu Oshima, Tatsushi Saito, Tatsuya Yokoi, Yuichi Ikuhara, Katsuyuki Matsunaga |
| On-Site Speaker (Planned) |
Xufei Fang |
| Abstract Scope |
It was recently found that extremely large plasticity is exhibited in bulk compression of single-crystal ZnS in complete darkness. Such effects are believed to be caused by the interactions between dislocations and photo-excited electrons and/or holes. However, methods for evaluating dislocation behavior in such semiconductors with small dimensions under a particular light condition had not been well established. Here, we propose the “photo-indentation” technique to solve this issue by combining nanoscale indentation tests with fully controlled lighting system. The quantitative data analyses based on this photo-indentation approach successfully demonstrate that the first pop-in stress indicating dislocation nucleation near the surface of ZnS, clearly increases by light irradiation. Additionally, the room-temperature indentation creep tests show a drastic reduction of the dislocation mobility under light. Our approach demonstrates great potential in understanding the light effects on dislocation nucleation and mobility at the nanoscale, as most advanced technology-related semiconductors are limited in dimensions. |