|About this Abstract
||MS&T23: Materials Science & Technology
||Late News Poster Session
||L-9: Atomic Layer Deposition of MoOx Thin Films Using Mo(iPrCp)2H2 and O3
||Ethan L. Hendrix, Ben M. Garland, Vamseedhara Vemuri, Nicholas Strandwitz
|On-Site Speaker (Planned)
||Ethan L. Hendrix
This work studied the growth of molybdenum oxide thin films with thermal atomic layer deposition (ALD) using Mo(iPrCp)2H2 and O3 as precursors. Growth parameters were determined by varying growth temperature and precursor dose times. ALD growth was exhibited in a temperature range of 100-200 °C. The growth per cycle (GPC) ranged from 1.3-1.7 Å/cycle with a standard uniformity parameter (SUP) of <5%. Attempts to grow films using H2O as an oxygen source showed no significant growth. Film properties were measured using spectroscopic ellipsometry, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and infrared spectroscopy.