|About this Abstract
||2023 TMS Annual Meeting & Exhibition
||Late News Poster Session
||D-40: Spin-orbit Torque Switching Enabled by Uniaxial Magnetocrystalline Anisotropy
||Shreyes Nallan, Jian-Gang (Jimmy) Zhu
|On-Site Speaker (Planned)
In this work, we present the creation of a material system with in-plane uniaxial magnetocrystalline anisotropy. This property enables the creation of scalable and uniform magnetic memories, as well as novel spin-torque devices.
Uniaxial in-plane anisotropy is generated through crystalline epitaxy between platinum and cobalt layers on a single-crystal substrate. Its presence is confirmed by crystalline characterization and angle-dependent magnetic hysteresis measurements, and is shown to agree well with theoretical derivations and numerical simulations for an energy-based magnetostatic model.
Furthermore, we investigate the interaction between this uniaxial in-plane anisotropy and the spin-transfer torque in a spin Hall switching device -- an interaction whose fundamental behavior is currently unknown. We examine the angular dependence of the critical switching current in such a system through theoretical analysis and time-resolved simulations based on the Landau-Lifshitz-Gilbert (LLG) equation. Finally, we discuss experimental validation of these theoretical results with a pillar-and-channel nanodevice.
||Magnetic Materials, Nanotechnology, Electronic Materials