|About this Abstract
||2023 TMS Annual Meeting & Exhibition
||2023 Technical Division Student Poster Contest
||SPG-6: Electronic Transport Properties of Mn2Sb
||Salil Paranjape, Daniel Shoemaker
|On-Site Speaker (Planned)
Magnetic materials with the tetragonal P4/nmm Cu2Sb structure have the potential to control in-plane antiferromagnetic ordering through electrical currents or optical pulses, making them interesting for spintronic applications. However, their high resistance can cause significant joule heating during electrical read/write operations. Mn2Sb has been studied as a potential alternative due to its low defect density, which may lead to low resistivity. Single crystals of Mn2Sb were synthesized and their structure was characterized, showing a low amount of defects. Four-point resistivity measurements revealed a resistivity of 12.8 μOhm.cm at low temperatures and a high RRR of 75. This is lower than the prototypical Cu2Sb-type antiferromagnetic spintronic candidate CuMnAs (1000 μOhm.cm and RRR=2) (Volný et al. Phys. Rev. Materials 4, 064403, 2020). Mn2Sb may therefore be a promising material for spintronic devices due to its low resistivity and lack of defects.
||Magnetic Materials, Characterization,