|About this Abstract
||MS&T23: Materials Science & Technology
||Grain Boundaries, Interfaces, and Surfaces: Fundamental Structure-Property-Performance Relationships
||Modeling SiN Crystallization in Microelectronics Manufacturing Using Phase-field Method
||Aashique Alam Rezwan, Jennie Podlevsky, Calvin Parkin, Khalid Hattar, James Matthew D. Lane, Tesia Janicki, Scott Grutzik, Edwin Chiu, Chris Bishop, Hojun Lim
|On-Site Speaker (Planned)
||Aashique Alam Rezwan
Silicon Nitride (SiN) has a wide range of applications as a structural material in integrated microelectronics, micro-optoelectronics and micromechanical systems. This thin film is fabricated in common microelectronics film stacks on silicon using low pressure chemical vapor deposition (LPCVD). In the presence of phosphorous dopants and other surface imperfections, anomalous SiN crystallization is observed which poses undesirable electrical properties. We have modeled the crystallization phenomena of 𝛂-SiN phases using an orientation-field based phase-field model with growth front nucleation and interface anisotropy to characterize the anomalous SiN crystallization. Predicted spherulitic patterns of the 𝛂-SiN induced by misorientation dependent grain boundary energy is validated using experimental observation whereas interfacial energies are calculated using molecular dynamic simulations. The predictive capabilities enabled by this work can be used during the design phase of microelectronics development. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.