|About this Abstract
||2021 TMS Annual Meeting & Exhibition
||Ceramic Materials for Nuclear Energy Research and Applications
||Ionization Effects on Damage Accumulation Behavior in SiC
||Lauren Nuckols, Miguel L Crespillo, Yanwen Zhang, William J Weber
|On-Site Speaker (Planned)
Characterization of ion-irradiation effects in materials is needed to develop performance models for materials and devices in reactor environments. In SiC, ion-induced ionization facilitates defect annealing along the ion path and competes with damaging processes. Ionization effects are present in SiC under all intermediate to high energy ion irradiations and fusion conditions. Here, the sensitivity of disordering processes to changes in total ionization energy deposition is examined for a range of ions in 4H- and 3C-SiC. Damage accumulation was examined using Rutherford backscattering spectrometry in channeling geometry. Ion beam induced luminescence was used in situ to characterize defect formation and evolution from low damage energy ions. There is a direct relationship between incident ion atomic number and its disordering sensitivity to ionization changes. The harder recoil spectrum induced by heavier ions are less coupled to ionization induced annealing and produce more thermally stable defects compared to lighter mass ions.