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Meeting 2023 TMS Annual Meeting & Exhibition
Symposium Frontiers of Materials Award Symposium: Ultra-Wide Bandgap Materials and Heterostructures for Next Generation Power, RF and Quantum Applications
Sponsorship TMS Functional Materials Division
TMS: Nanomaterials Committee
TMS: Thin Films and Interfaces Committee
Organizer(s) Yuji Zhao, Rice University
Scope Ultrawide-bandgap (UWBG) materials such as diamond, Ga2O3, BN, and AlN, are a new class of semiconductors that are promising for high-performance devices in power electronics, RF communication, UV photonics, quantum sensing, and quantum computing applications. The outstanding materials properties of UWBG materials include very large bandgaps, high critical electric fields, high carrier mobilities, and chemical inertness. Despite these attractive characteristics, there are many hurdles in UWBG materials ranging from fundamental material physics, synthesis methods, and device fabrication and characteristics. For example, despite some promising demonstration, it is still considered very challenging for the effective doping of some UWBG materials such as AlN and BN.

In this symposium, several leaders in UWBG materials will give invited talks to present comprehensive reviews on the material properties, synthesis methods, and device applications of UWBG semiconductors including diamond, Ga2O3, BN, and AlN, where key challenges, recent progress, and future research opportunities will be discussed. These timely discussions will be very beneficial for the electronics materials and UWBG materials community, helpful to advance the fundamental understanding in UWBG materials, and to aid the future development of UWBG devices. Specifically, this symposium will discuss the following key issues and topics on UWBG materials and devices:

• Synthesis techniques for UWBG materials, covering both bottom-up and top-down methods such as chemical vapor deposition and physical vapor deposition.

• Key properties of UWBG materials, including structure, electronic, photonic, thermal, and mechanical properties.

• Doping strategies of UWBG materials, containing topics such as doping mechanisms, dopant species, and doping techniques.

• Finally, various devices applications of UWBG materials are extensively explored, ranging from electronics such as power devices, RF devices, and photonics such as optoelectronic devices, integrated photonics, to emerging quantum applications, such as quantum computing, quantum sensing.

Abstracts Due 07/01/2022
Proceedings Plan Planned: None Selected

AlN-based Microelectronics for Extreme High Temperature Environments
Epitaxial Growth of c-BN on Diamond and Strategies for Electronic Applications
Gallium Oxide Semiconductors: Recent Progress and Future Prospective
Nanoscale Engineering of III-Nitride Heterostructures for High Efficiency UV Optoelectronics and Quantum Photonics
Quantum Technologies with Diamond
Ultrawide Bandgap Materials: Properties, Synthesis and Devices

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