| Abstract Scope |
We present an overview of some recent advances of nanoscale engineering of III-nitride heterostructures that are relevant for the development of high efficiency ultraviolet optoelectronic and quantum photonic devices. We show that relatively efficient p-type conduction of AlN and Al-rich AlGaN can be achieved in nearly dislocation-free nanostructures, or through in situ Fermi-level control during the growth of epilayers. High luminescence emission efficiency in the deep UV can be realized by exploiting strong quantum confinement of charge carriers, through either the formation of quantum dot-like nanoclusters or monolayer quantum wells. We further report on the first demonstration of fully epitaxial ferroelectric nitride semiconductors, including ScAlN and ScGaN, which can exhibit significantly enhanced electrical, piezoelectric, as well as linear and nonlinear optical properties. The recent advances of ScAlN integrated quantum photonics, including waveguides, ring resonators, and modulators, will be discussed. |