Due to excellent electrical and thermal properties, aluminum nitride (AlN)-based microelectronics have gained interest for extreme environment sensing and RF applications in the space, energy, defense, and automotive industries. Extreme space applications for AlN technology include uncooled telecommunications for robotic exploration of hot planetary bodies like Venus, which would significantly increase mission length and scientific agenda. Yet despite successful demonstration of AlN semiconductor technology at 1000°C in vacuum, lingering challenges remain to achieve reliable device operation at ultra-high temperatures. In this talk, advances in techniques to mitigate high temperature performance instability, such as the development of novel contact metallization schemes, will be discussed. Recent promising developments in high-temperature capable solid-state two-dimensional electron gas (2DEG) devices and piezoelectric MEMS resonators for temperatures up to 600°C will be presented. Finally, the future landscape of AlN and other UWBG microelectronics for extreme high temperature space and terrestrial applications will be discussed.