About this Abstract |
Meeting |
MS&T21: Materials Science & Technology
|
Symposium
|
13th Symposium on Green and Sustainable Technologies for Materials Manufacturing and Processing
|
Presentation Title |
Bandgap Engineering of Epitaxial â-(AlxGa1-x)2O3 Films Grown via the Spin-coating Method |
Author(s) |
Iva Milisavljevic, Yiquan Wu |
On-Site Speaker (Planned) |
Iva Milisavljevic |
Abstract Scope |
A wide bandgap β-Ga2O3 is a material of great chemical and physical stability and numerous applications. It has been demonstrated that alloying β-Ga2O3 with Al enables further increase of bandgap energy (Eg) and opens up new possibilities for its use in ultra-high-power electronics and ultra-short wavelength optoelectronics. A sol-gel route was used for the preparation of β-(AlxGa1-x)2O3 films that were spun-coated onto the (0001) sapphire substrates. A comprehensive analysis of structural and optical properties revealed a notable change in crystalline and optical properties of the films resulting from the incorporation of Al into the Ga2O3 matrix. The obtained results demonstrated a great potential of spin-coating method for the growth of good quality (AlxGa1-x)2O3 epitaxial films with tunable bandgap energy. |