About this Abstract |
Meeting |
2022 TMS Annual Meeting & Exhibition
|
Symposium
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30 Years of Nanoindentation with the Oliver-Pharr Method and Beyond
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Presentation Title |
Correlation between Electrical Contact Resistance, Deviation from Elastic Unloading and Phase Transformation in Silicon |
Author(s) |
Ben Beake, Tim Jochum |
On-Site Speaker (Planned) |
Tim Jochum |
Abstract Scope |
Silicon undergoes complex behavior during indentation, with phase transformations and brittle fracture at higher load. The Oliver and Pharr method takes advantage of the fact that initial elastic unloading follows power-law behavior, so any deviation from this can be used to detect the onset of non-elastic deformation. Electrical contact resistance measurements using a Boron-doped diamond Berkovich indenter as the electrically conductive probe show that, for Si(100), this is associated with phase transformation during unloading which begins well before the well-known “pop-out” event. Initial deviation from elastic behavior was accompanied by a more rapid decrease in electrical current with subsequent pop-out accompanied by an abrupt increase in electrical current. These changes are consistent with Si-II initially transforming to a-Si and then to more electrically conductive high pressure phases such as Si-III/Si-XII. |
Proceedings Inclusion? |
Planned: |
Keywords |
Characterization, Mechanical Properties, |