| About this Abstract |
| Meeting |
MS&T23: Materials Science & Technology
|
| Symposium
|
2023 Undergraduate Student Poster Contest
|
| Presentation Title |
Thickness Measurement of Gallium Phosphide Films on Silicon Using X-ray Fluorescence |
| Author(s) |
Evan Freeland, Donald Windover, Lauren Kaliszewski, Tyler Grassman |
| On-Site Speaker (Planned) |
Evan Freeland |
| Abstract Scope |
Thin films, with thicknesses ranging from less than a nanometer to hundreds of nanometers, are an integral part of any modern electronic device. A fast and repeatable technique is needed for measurement of film thickness, both post-processing and in-situ during depotision. X-ray fluorescence (XRF) is a promising technique for this role. By measuring fluorescence intensity for films of varying thicknesses and plotting the results against thickness measurements from an SI-traceable method, a calibration curve can be constructed and used to assess the thickness of unknown films. In this study, a series of heteroepitaxial GaP films on Si substrates were characterized with XRF. XRF maps were produced to study thickness heterogeneity. High-precision measurements were taken with X-ray reflectivity. Between thicknesses of 40 and 500 nm, the Ga line intensity is found to be proportional to the thickness measured by XRR, yielding a simple and readily accessible determination of thickness via XRF. |