|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||High Entropy Alloys VIII
||Atomic and Electronic Basis for the Serration Behavior of High Entropy Alloys and Metallic Glasses
||Jinshan Li, William Yi Wang, Jun Wang, Shun-Li Shang, Yi Wang, Xi-Dong Hui, Peter K Liaw, Zi-Kui Liu
|On-Site Speaker (Planned)
Refractory high entropy alloys (RHEAs) and metallic glasses (HE-MGs) possess attractive mechanical properties, e.g. high yield strength and fracture toughness. The fundamental understandings of the atomic and electronic principles are important to reveal the origins for the formation and deformation behavior of RHEAs, and, thus, to expand the alloy development strategies. In the current work, the local atomic arrangement dominated yield strengths of WMoTM1TM2 (TM=Ta, Nb and V),TiZrTM1TM2 (TM=Hf, Mo, Ta, V and W) BCC RHEAs and Vit-1 HE-MG are predicted and discussed. It is found that the yield strength of those RHEAs and HE-MGs can be scaled by a six power-law via electron work function. Moreover, the bonding-charge density captures the electron redistributions caused by the lattice distortion and elastic deformation and provides an insight into the nature of loosely-bonded weak spots and serration, resulting in intermittent avalanches of defects moving through the material.
||Planned: Supplemental Proceedings volume; Planned: Supplemental Proceedings volume