| About this Abstract |
| Meeting |
MS&T21: Materials Science & Technology
|
| Symposium
|
Engineering Ceramics: Microstructure-Property-Performance Relations and Applications
|
| Presentation Title |
Control of Thermal, Electrical, and Mechanical Properties of Porous SiC Ceramics via Doping |
| Author(s) |
Shynar Kultayeva, Young-Wook Kim, In-Hyuck Song |
| On-Site Speaker (Planned) |
Shynar Kultayeva |
| Abstract Scope |
Aluminum-, boron-, nitrogen-, scandium-, and vanadium-doped porous SiC ceramics were fabricated to investigate the effects of dopants on thermal, electrical, and mechanical properties of porous SiC ceramics. A B-doped porous SiC ceramic exhibited the highest flexural strength (25.9 MPa) and thermal conductivity (16.6 W·m-1·K-1), whereas a Sc-doped porous SiC ceramic exhibited the lowest flexural strength (10.5 MPa) and thermal conductivity (7.7 W·m-1·K-1) among the doped porous SiC ceramics. The electrical conductivity of a nitrogen-doped porous SiC ceramic was 4.8 × 100 S/cm, four orders of magnitude higher than that of an undoped porous SiC ceramic (8.3 × 10-4 S/cm). The thermal and mechanical properties were dependent primarily on the necking area between SiC grains, whereas the electrical conductivity was strongly influenced by the doping. The results suggest that the electrical conductivities of porous SiC ceramics can be successfully tuned independently of the thermal conductivity by a suitable doping. |