|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Solar Cell Silicon
||Dislocation-based Thermodynamic Models of V-pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates
||Khaled H. Khafagy , Tarek M. Hatem, Salah M. Bedair
|On-Site Speaker (Planned)
||Tarek M. Hatem
The growth of III-N such InGaN on Si substrates is inherently difficult and leads to high-defects densities. Such defects act as scattering centers that impact the minority carrier lifetime and therefore efficiency. Furthermore, generation of high-defects densities in the interfaces between III-N layers and Si substrate lead to higher generation of V-shaped pits densities on the top surface. V-pits generates rough surfaces that directly affects the performance and the efficiency of the device.
In the current work, we present a thermodynamic based-model that considers the energy balance between the strain energy in the III-N epitaxial layers, the dislocation energy that forms a V-pit, and the strain energy relieved to nucleate a V-pit in order to achieve thermal equilibrium in the system. The results of the model are compared to experimental observations of the growth of semi-bulk InGaN/GaN structure.
||Planned: Supplemental Proceedings volume