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Meeting 2020 TMS Annual Meeting & Exhibition
Symposium Advances and Discoveries in Non-equilibrium Driven Nanomaterials and Thin Films
Presentation Title Low Temperature, Metal Induced Crystallization Growth of SixGe1-X Films on Nanostructured Si Substrates
Author(s) Ayu Wazira Azhari, Kamaruzzaman Sopian, Dewi Suriyani Che Halin, Uda Hashim, Saleem H Zaidi
On-Site Speaker (Planned) Ayu Wazira Azhari
Abstract Scope In this study, the method for crystal growth of the a-Ge films is further improved by using a novel metal induced crystallization technique. Results shows that the annealing temperature was reduced to about 400oC for Au induced thermal annealing compared to 800oC for the conventional thermal annealing. The crystalline structure of the Ge layer is also improved showing minimal discrepancies between the thermal annealed and Au induced anneals sample. This is shown by the low FWHM for both thermal annealed and Au induced Ge films of about 5.27 and 5.94 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261 and 0.175 for thermal annealed and Au induced Ge respectively.
Proceedings Inclusion? Planned: Supplemental Proceedings volume


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