|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Advances and Discoveries in Non-equilibrium Driven Nanomaterials and Thin Films
||Formation of Reduced Graphene Oxide/amorphous Carbon P-N Junctions via Highly Nonequilibrium Route of Nanosecond Laser Irradiation
||Siddharth Gupta, Jagdish Narayan
|On-Site Speaker (Planned)
The device integration of reduced graphene oxide is impeded by scalability and high temperature (>2000 K) required for effective reduction. We present a novel approach for direct laser writing of heavily rGO by nanosecond laser melting of amorphous carbon. Ultrafast quenching from the undercooled melt state results in the conversion of amorphous carbon into large-area rGO. Low undercooling in the melt state, triggers transformation of liquid carbon into graphene. The rGO films exhibit 2600 S cm-1 electrical conductivity and electron mobility as high as 220 cm2/Vs. The ultrafast regrowth of rGO creates an atomically sharp interface between n-type rGO and p-type amorphous carbon, forming p–n junctions with 0.3 V turn-on voltage, 110 @±1.5V rectification ratio and 0.13 eV diode activation energy. This unique method solves the problems of traps and defects associated with equilibrium-based rGO fabrication methods, providing insights into the fundamental mechanism driving laser writing of graphene-based materials.
||Planned: Supplemental Proceedings volume