|About this Abstract
||2021 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications IX
||Microstructure and Band Engineering for the High Performance of n-type Mg3Sb2-Mg3Bi2 Alloy
||Kazuki Imasato, G. Jeffrey Snyder
|On-Site Speaker (Planned)
There has been significant interest in Mg3(Sb,Bi)2 since the recent demonstration of high zT in the n-type materials. In this study, we demonstrate that the Mg3Sb2-Mg3Bi2 alloy can overcome the performance of Bi2Te3 around room temperature. The main mechanisms of this improvement are optimization of the band structure and microstructure. Our annealing and grain size study shows, the reduction of low temperature electrical resistance leads to a multi-fold improvement in the thermoelectric performance zT at room temperature. By investigating the effect of Bi content on the effective mass and grain size, the optimized composition of the alloy, achieves comparable zT as commercialized Bi2Te3. The understanding of these mechanisms is crucial to the cooling and wasted heat recovery applications of Mg3Sb2-Mg3Bi2 alloy. Considering the limited number of state-of-art n-type thermoelectric materials, the further development of Mg3Sb2-Mg3Bi2 alloys is a significant step towards the commercial application of thermoelectric materials.
||Characterization, Energy Conversion and Storage, Electronic Materials