|About this Abstract
||2021 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications IX
||Mg3(Sb,Bi)2 Thermoelectric Single Crystals: From p-type to n-type
||Chenguang Fu, Yu Pan, Kazuki Imasato, Mengyu Yao, Tiejun Zhu, G. Jeffrey Snyder, Claudia Felser
|On-Site Speaker (Planned)
The understanding of the intrinsic electronic structure and transport properties of solid-state materials lays the foundation for the optimization of their thermoelectric performance. Owing to the elimination of grain boundary effect, high-quality single crystals with fewer defects generally exhibit the up limit of the carrier mobility and lattice thermal conductivity of a material. In this talk, I will present our recent work on Mg3(Sb,Bi)2 thermoelectric single crystals. Started with the p-type crystals grown by the Sb flux method, we are now able to get n-type single crystals either by annealing the p-type crystals under Mg vapor or directly growing in the Mg flux method. These n-type single crystals enable the revelation of the intrinsic carrier scattering mechanism and demonstrate the enhancement of thermoelectric performance near room temperature owing to the eliminated grain boundary scattering. The electronic structure of Mg3(Sb,Bi)2 is also directly observed by performing the angle-resolved photoemission spectroscopy study.