|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Accelerated Materials Evaluation for Nuclear Applications Utilizing Irradiation and Integrated Modeling
||Impact of Ionization Effects and Defect Trapping on Microstructure Evolution in Light Ion Irradiated Uranium Dioxide
||Marat Khafizov, Yuzhou Wang, M Faisal Riyad, Janne Pakarinen, Lingfeng He, Anter El-Azab, David Hurley
|On-Site Speaker (Planned)
This study considers impact of defects produced by light ion irradiation on properties of polycrystalline uranium dioxide (UO2). UO2 samples were irradiated with 2.6 MeV hydrogen at 300°C and 3.9 MeV helium ions at 200°C to a comparable dose of 0.05 dpa. These conditions were chosen to limit mobility of point defects and effectively capture early stages of damage evolution. Lattice expansion was determined from XRD and modulated thermoreflectance method was used to measure thermal conductivity. These characterization revealed notably larger lattice expansion and thermal conductivity reduction in He samples. We analyze our results using standard point defect models for lattice expansion and thermal conductivity reduction that were informed by atomic level simulation reported in the literature. Our analysis suggests that the difference in the observed evolution of microstructure under two different irradiation conditions can be attributed to ionization effect and trapping of implanted ions.