|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Solid State Diffusion Bonding of Metals and Alloys
||Instant Copper Direct Bonding Using <111>-oriented Nanotwinned Cu Microbumps
||Kai-Cheng Shie, Jing-Ye Juang, Chih Chen
|On-Site Speaker (Planned)
Ultra-fine pitch (under 10 um) interconnects are needed for high performance chips, such as high computing chips. Copper direct bonding technology is the solution of this application in the future. This study uses semiconductor manufacturing processes to fabricate top dies and bottom dies with resistance test vehicles. The test dies have arrays of <111>-oriented nanotwinned Cu (nt-Cu) microbumps. With about 40 % <111>-oriented Cu surface, Cu direct bonding can successfully achieve in 5 s with 300 ℃ and 90 MPa bonding pressure in N2 ambient. The pressure can lower to 30 MPa and bond in 10 s, too. The resistance of a single bump is about 4.8 mohm using Kelvin probes. The microstructures be analyzed systematically by FIB and EBSD. The instant bonding processes may provide a solution for chip to chip and chip to wafer bonding.
||Planned: Supplemental Proceedings volume