| About this Abstract |
| Meeting |
MS&T21: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Effect of Fluoride Substitution on the Morphology and Electrical Properties of Dielectric Storage Material |
| Author(s) |
Narsingh Bahadur Singh, Laxman Singh, Dinesh Prajapati, Narayan Singh, Fow-Sen Choa, Bradley Arnold, Kamdeo Mandal, Lisa Kelly, Atendra Kumar |
| On-Site Speaker (Planned) |
Laxman Singh |
| Abstract Scope |
Modification in the design and production of a low cost material with proven process provides a pathway for high energy density dielectric energy storage. Barium titanate and Barium strontium titanate have been proven as commercial materials for their wide applications in variety of devices and components most notably for memory applications. These materials have been studied for their processing, electrical and dielectric properties. These are ferroelectric and unstable showing phase transitions. there is a continuous effort to achieve high dielectric constant and high resistivity at low cost for large scale applications. Fluorine doped barium strontium titanate dielectric material was studied to determine morphological transition and its effect on dielectric properties. Dielectric is highly dependent on processing methods and shows variation with crystallinity of material, processing temperature and cooling conditions during processing. This transition enables possibility of fibers and self-assembled structures for conformal structures for energy storage without decrease in capacitance. |