| About this Abstract |
| Meeting |
MS&T23: Materials Science & Technology
|
| Symposium
|
Ceramics and Glasses Modeling by Simulations and Machine Learning
|
| Presentation Title |
Atomistic Perspectives in Characterizing Crystalline Defect Formation in Amorphous Silicon Nitride |
| Author(s) |
Tesia Janicki, Carlos Chacon, Edwin Chiu, Jason Gibson, Scott Grutzik, Khalid Hattar, Richard Hennig, Hojun Lim, Calvin Parkin, Jennie Podlevsky, Aashique Rezwan, Chris Bishop, J. Matthew D. Lane |
| On-Site Speaker (Planned) |
Tesia Janicki |
| Abstract Scope |
Amorphous silicon nitride (a-SiN) is used as a low-stress, layered component in microelectronics devices. Spurious crystallite formation in the a-SiN layer during fabrication distorts electronic properties. We introduce a multiscale effort to identify the root causes and mechanisms of crystallite formation with the goal of adapting synthesis processes to prevent this spurious crystallization. Our presentation focuses on atomistic-scale models, invoking molecular dynamics with a series of empirical interatomic potentials to compare and predict structural, thermodynamic, and kinetic properties. Atomistic results are discussed alongside experimental observations and integration with mesoscale models towards an improved understanding of crystallization in a-SiN. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525 |