About this Abstract |
Meeting |
2023 TMS Annual Meeting & Exhibition
|
Symposium
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Alloys and Compounds for Thermoelectric and Solar Cell Applications XI
|
Presentation Title |
Redissolution of Ge precipitates Boosts Thermoelectric Performance and Self-tunes the Carrier Concentration in Homogenous GeTe materials |
Author(s) |
Yi-Fen Tsai, Hsin-Jay Wu |
On-Site Speaker (Planned) |
Yi-Fen Tsai |
Abstract Scope |
The germanium-telluride (GeTe) is one of the attractive thermoelectric (TE) materials due to its outstanding TE performance. However, the Ge vacancy with low formation energy results in high vacancies concentration in GeTe ( ~10-21 cm-3) which exceeds the optimal region for p-type TE alloys. Controlling the Ge vacancies and Ge precipitates become crucial in manipulating the carrier concentration and TE performance. This work utilizes pulsed hot-pressing to enable the redissolution of Ge precipitates and reduction in Ge vacancies sites for an In-doped GeTe. In the meantime, the nano-scale defects are introduced to lower the thermal conductivity. The average PF shows a 200% enhancement and the peak zT is 144% higher than the pristine GeTe. |
Proceedings Inclusion? |
Planned: |