About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thin Films and Coatings: Properties, Processing and Applications
|
| Presentation Title |
Modifying the Optical Properties of Submicron Layer of Silicon by Introducing Dislocation Loops Formed by Submicron Implantation of Ar, Er and O |
| Author(s) |
Sufian Abedrabbo, Yongqiang Wang, Michael Pettes |
| On-Site Speaker (Planned) |
Sufian Abedrabbo |
| Abstract Scope |
In this work, various types of prime-grade Si substrates were implanted by 4 different fluences of Er and O while maintaining 14:1 of O:Er ratio. The two implanted energetic beams were designed to have the projected range around 110 nm. The doping concentrations for the Er were ranging from 7.6×10^16 to 7.6×10^19. The processed samples were then annealed at temperatures ranging from 600 to 1000 C to achieve recrystallization of the amorphized Si as well as a network of dislocation loops. Another set of Cz-Si and FZ Si were implanted by Ar with fluences 1013 to 1016/cm2 at 110keV to reach projected range comparable to that of Er-O. We report RT-photoluminescence spectra from Si in both cases that varies as function of the annealing temperature for all implanted fluences. Strain is mapped using micro-Raman and TEM images to clarify the dislocation network relation to the implanted fluence and annealing temperature. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Electronic Materials, Nanotechnology |