About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thin Films and Coatings: Properties, Processing and Applications
|
| Presentation Title |
Low-Temperature Synthesis of Crystalline hBN Thin Films via Ion Beam-Assisted Pulsed Laser Deposition |
| Author(s) |
Venkata A.S Kandadai, Jacob Petersen, Bharat K. Jasthi |
| On-Site Speaker (Planned) |
Bharat K. Jasthi |
| Abstract Scope |
Hexagonal boron nitride (hBN) thin films have attracted growing interest for applications in electronics, tribology, optoelectronics, and anti-corrosion coatings. Conventional methods often yield amorphous films and require high temperatures, toxic precursors, or catalytic substrates for crystallization. This study demonstrates the synthesis of crystalline hBN films on silicon (100) at 600 °C using ion beam-assisted pulsed laser deposition without toxic gases. The effects of varying Ar:N₂ gas mixtures (0–100% N₂) and ion beam energies (0–400 eV) on microstructure and surface morphology were investigated. Crystallinity improved significantly at ≥50% N₂ and ≥200 eV, with nanocrystallite sizes of ~24 ± 8 nm. Raman spectroscopy, grazing incidence XRD, and TEM confirmed hBN phase formation. Increased ion energy and N₂ content enhanced grain growth and roughness due to larger hBN nanoislands. The results highlight the role of ion bombardment in promoting nanograin formation and improved crystallinity at reduced temperatures, expanding the potential for hBN film integration in advanced technologies. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Characterization, Electronic Materials |