|About this Abstract
|2022 TMS Annual Meeting & Exhibition
|2D Materials – Preparation, Properties & Applications
|Novel Approach to Wafer Scale Integration of Graphene and h-BN Related 2-D Materials
|On-Site Speaker (Planned)
The device integration of graphene and reduced graphene oxide (rGO) is impeded by scalability and high temperature (>2000 K) treatment required for high-quality rGO. We present a novel approach for direct laser writing of heavily rGO films by nanosecond laser melting of amorphous carbon, where the quenching from the undercooled melt leads to the formation of large-area rGO films. The laser-irradiated rGO films exhibit electron mobility of 220 cm2/Vs and charge carrier concentration of -1.2x1021/cc at 300 K. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest low disorder and charge transport via 2D Mott variable range hopping (VRH) between the graphene islands for rGO films. The ultrafast regrowth of rGO creates an atomically sharp interface between n-type rGO and p-type amorphous carbon, resulting in a p–n junction heterojunction diodes This unique laser processing also solves the problems of traps and defects associated with equilibrium-based rGO fabrication methods.