About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thin Films and Coatings: Properties, Processing and Applications
|
| Presentation Title |
D-29: Q-Carbon Seeded Continuous Diamond and Patterned Epitaxial Film Growth for Thermally Efficient High-Power Electronics |
| Author(s) |
Sumeer Khanna, Kishan Kumawat, Roger Narayan, Jagdish Narayan |
| On-Site Speaker (Planned) |
Sumeer Khanna |
| Abstract Scope |
Extreme heat dissipation in high-power electronics is a major bottleneck for efficient device performance. Diamond integration helps to remove excessive heat. Here, we have fabricated polymer structures by direct-laser-writing (DLW), which are carbonized in inert Ar atmosphere at ~900°C to transform into nanodiamond or novel Q-carbon nanoballs. Q-carbon provides nucleation sites for diamond growth via hot-filament chemical vapor deposition (HFCVD). Carbonized structures show approximately 45–55% sp3, as confirmed by Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). The diamond crystallites show a distinctive Raman peak upshift in the range of 1333–1335 cm−1 with a full width at half maximum of ≤ 5 cm−1, indicating some strain across the diamond and Si (100). Fourfold growth morphology with {111} planes of diamond crystallites is shown by high-resolution scanning electron microscopy (HR-SEM), which correlates with the <100> growth of diamond. The dislocation interface across GaN-on-diamond and SiC-on-diamond is analyzed for phonon transport by STEM-EELS. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, High-Temperature Materials |