About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thin Films and Coatings: Properties, Processing and Applications
|
| Presentation Title |
Wafer Scale Integration of Diamond Films Using PECVD Grown Q-Carbon Thin films |
| Author(s) |
Kishan Lal Kumawat, Naveen Narasimhachar Joshi, Pranay Kalakonda, Fahad Munshe, Jagdish Narayan |
| On-Site Speaker (Planned) |
Kishan Lal Kumawat |
| Abstract Scope |
We report the continuous growth of Q-carbon seeded diamond films on sapphire substrates over wafer scale. Q-carbon films were deposited on sapphire(0001) using PECVD. Low-energy Ar+ ion bombardment in a PECVD process generates Frenkel pairs, effectively converting ordinary amorphous carbon into tetrahedral Q-carbon thin films. Q-carbon is a novel phase of carbon that has randomly oriented carbon tetrahedra and acts as a seed for diamond growth. The PECVD-grown Q-carbon was converted into continuous diamond film employing the HFCVD. The structural, optical, electrical and mechanical properties of the as-grown diamond films were characterized using various techniques. The results confirm the large-area growth of diamond film on wafers up to 2 inches in diameter. Furthermore, various buffer-layers between sapphire and diamond are being introduced to enable heteroepitaxy in diamond films. Thus, the present study provides insight into the growth of epitaxial diamond films on large areas for surface-coating and high-power electronic applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, Surface Modification and Coatings |