|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Recent Advances in Printed Electronics and Additive Manufacturing: 2D/3D Functional Materials, Fabrication Processes, and Emerging Applications
||Effect of Dichloroethane on the Electronic Transport Behavior in Semiconducting MoS2 Temperature
||Ravindra Mehta, Kishan Jyanand, Anupama Kaul
|On-Site Speaker (Planned)
The effect of chloride doping on temperature-dependent optoelectronic behavior of two-dimensional MoS2 has been reported in this work. The layer-dependent bandgap of MoS2 not only increases in magnitude as we go from bulk to monolayer, but it also transitions from indirect to direct bandgap. Moreover, MoS2 is also interesting for optoelectronic applications resulting in enhanced optical absorption over a broad wavelength range. The ultra-thin nature of these materials makes it challenging to use conventional doping strategies. From our observations with chloride doping, the barrier height reduced significantly after doping. The devices were fabricated using electron beam lithography with Au/Ti electrodes for metal deposition by lift-off, and the effect of temperature on photocurrents and other characteristics of the transistors will be reported for a comparative analysis of the doped and undoped structures with MoS2.