|About this Abstract
||MS&T22: Materials Science & Technology
||Energy Materials for Sustainable Development
||Manipulation of Ferroelectric Domain Walls and Light Absorption for Optimization of Bulk Photovoltaic Effect
||Vasilii Balanov, Jani Peräntie, Yang Bai
|On-Site Speaker (Planned)
The bulk photovoltaic effect (BPVE) is distinctive due to the presence of spontaneous polarization in ferroelectric materials acting as the 'self-junction' thus promoting the separation and transportation of photo-excited charge carriers. Compared to the semiconductor-based photovoltaic effect which relies on p-n junction or Schottky barrier, the BPVE is advantageous in terms of monolithic material/device structure, flexible electrode selection and above-bandgap photovoltage. However, ultra-low photocurrent and the resultant negligible photovoltaic energy conversion efficiency (PCE) has restricted the BPVE from practical applications. This work investigates the influence of domain walls in ferroelectric single crystals on the output of the BPVE whilst ensuring a complete light absorption. These two factors have rarely been paid attention to simultaneously in previous works. Their synergetic study in this work reveals a potential route for the BPVE solar cells to boost the PCE, giving promise to a complementary tool for solar energy conversion.